Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
To change the execution policy to run PowerShell scripts on Windows 11 (or 10), use these steps: Open Start. Search for ...
Abstract: Package degradation for high power insulated gate bipolar transistors (IGBTs) modules would seriously affect the operation safety of power electronic converters. Due to the variety of ...
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