Abstract: The switching losses of power Field Effect Transistors (FETs) such as Silicon IGBTs, MOSFETs, SiC MOSFETs, GaN HEMTs and Diamond FETs are highly dependent on the gate driver currents. These ...
Abstract: The unique voltage scaling potential of transistors at cryogenic temperature is identified. To fully exploit such potential for maximized DVFS efficiency and power reduction of cryo-digital ...
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